— IC芯片 | 连接器 | 传感器 | 被动器件 —
Advanced Linear Devices Inc. ALD1106PBL is used in FET, MOSFET Arrays category where integration and verification need to stay predictable. Key specs include Description (MOSFET 4N-CH 10.6V 14PDIP), Packaging (Tube), Temperature (0°C ~ 70°C (TJ)), Package/case (14-DIP (0.300", 7.62mm)), and Mounting (Through Hole).
What is the mounting method for ALD1106PBL?
Through Hole
What Drain to Source Voltage (Vdss) is listed for ALD1106PBL?
10.6V
Which Rds On (Max) @ Id, Vgs is listed for ALD1106PBL?
500Ohm @ 5V
What is the package/case of ALD1106PBL?
14-DIP (0.300", 7.62mm)
Advanced Linear Devices Inc. ALD1106PBL is a common choice in FET, MOSFET Arrays applications where the goal is to keep validation repeatable and avoid edge-case surprises during bring-up. A good discrete switch choice improves efficiency and robustness while keeping thermal design and qualification predictable. In practice, good switch selection keeps losses and temperature rise predictable, which makes qualification and derating easier to defend. Engineers often treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. In automotive electronics, discrete devices are qualified for transients, vibration, and predictable failure modes over thermal cycling. In automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. In motor control and robotics, MOSFET stages must survive stalls and reversals, so SOA and transient strategy are validated under real waveforms.