VQ2001P

Product Detailed Parameters

• Description：MOSFET 4P-CH 30V 0.6A
• Series：-
• Mfr：Vishay Siliconix
• Package：Tube
• Technology：MOSFET (Metal Oxide)
• Configuration：4 P-Channel
• FET Feature：-
• Drain to Source Voltage (Vdss)：30V
• Current - Continuous Drain (Id) @ 25°C：600mA
• Rds On (Max) @ Id, Vgs：2Ohm @ 1A, 12V
• Vgs(th) (Max) @ Id：4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：-
• Input Capacitance (Ciss) (Max) @ Vds：150pF @ 15V
• Power - Max：2W
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：-
• Package / Case：-
• Supplier Device Package：-
• Grade：-
• Qualification：-

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