G085C03D32

Product Detailed Parameters

• Description：MOSFET N/P-CH 30V 28A 8DFN
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• Technology：MOSFET (Metal Oxide)
• Configuration：N and P-Channel
• FET Feature：-
• Drain to Source Voltage (Vdss)：30V
• Current - Continuous Drain (Id) @ 25°C：28A (Tc), 12A (Tc)
• Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id：2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V, 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds：1085pF @ 15V, 1352pF @ 15V
• Power - Max：13W (Tc), 30W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Surface Mount
• Package / Case：8-PowerVDFN
• Supplier Device Package：8-DFN (3.15x3.05)
• Grade：-
• Qualification：-

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