G18NP06Y

Product Detailed Parameters

• Description：MOSFET N/P-CH 60V 18A TO252-4
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• Technology：MOSFET (Metal Oxide)
• Configuration：N and P-Channel, Common Drain
• FET Feature：-
• Drain to Source Voltage (Vdss)：60V
• Current - Continuous Drain (Id) @ 25°C：18A (Tc)
• Rds On (Max) @ Id, Vgs：35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 250µA, 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds：1350pF @ 30V, 2610pF @ 30V
• Power - Max：45W (Tc), 50W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Mounting Type：Surface Mount
• Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
• Supplier Device Package：TO-252-4
• Grade：-
• Qualification：-

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