AM12N65P

Product Detailed Parameters

• Description：MOSFET N-CH 650V 12A TO-220
• Series：-
• Mfr：Analog Power Inc.
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
• Rds On (Max) @ Id, Vgs：800mOhm @ 23A, 10V
• Vgs(th) (Max) @ Id：1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：23 nC @ 6 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：2691 pF @ 15 V
• FET Feature：-
• Power Dissipation (Max)：300W (Tc)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220AB
• Package / Case：TO-220-3

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