E3M0120090J-TR

Product Detailed Parameters

• Description：SIC, MOSFET, 120M, 900V, TO-263-
• Series：E
• Mfr：Wolfspeed, Inc.
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：900 V
• Current - Continuous Drain (Id) @ 25°C：22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：15V
• Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
• Vgs(th) (Max) @ Id：3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs：18 nC @ 15 V
• Vgs (Max)：+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 600 V
• FET Feature：-
• Power Dissipation (Max)：83W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：Automotive
• Qualification：AEC-Q101
• Mounting Type：Surface Mount
• Supplier Device Package：TO-263-7
• Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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