E3M0160120D

Product Detailed Parameters

• Description：SIC, MOSFET, 160M, 1200V, TO-247
• Series：E Series
• Mfr：Wolfspeed, Inc.
• Package：Tray
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：17.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：15V
• Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
• Vgs(th) (Max) @ Id：3.6V @ 2.33mA
• Gate Charge (Qg) (Max) @ Vgs：33 nC @ 15 V
• Vgs (Max)：-8V, +19V
• Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 1000 V
• FET Feature：-
• Power Dissipation (Max)：103W (Tc)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：Automotive
• Qualification：AEC-Q101
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-3
• Package / Case：TO-247-3

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