E6D10065G

Product Detailed Parameters

• Description：DIODE SIL CARB 650V 32A TO2632
• Series：E
• Mfr：Wolfspeed, Inc.
• Package：Bulk
• Technology：SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max)：650 V
• Current - Average Rectified (Io)：32A
• Voltage - Forward (Vf) (Max) @ If：1.5 V @ 10 A
• Speed：No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr)：0 ns
• Current - Reverse Leakage @ Vr：50 µA @ 650 V
• Capacitance @ Vr, F：630pF @ 0V, 1MHz
• Mounting Type：Surface Mount
• Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package：TO-263-2
• Operating Temperature - Junction：-55°C ~ 175°C
• Grade：-
• Qualification：-

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