AMB410N

Product Detailed Parameters

• Description：MOSFET N-CH 100V 5.2A DFN1.6X1.6
• Series：-
• Mfr：Analog Power Inc.
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：2.2A (Ta), 5.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：250mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id：1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：509 pF @ 15 V
• FET Feature：-
• Power Dissipation (Max)：1.8W (Ta), 9.9W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：6-DFN (1.6x1.6)
• Package / Case：6-PowerUFDFN

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