AMTP65H150G4LSGB

Product Detailed Parameters

• Description：GAN FET N-CH 650V 13A DFN8X8
• Series：-
• Mfr：Analog Power Inc.
• Package：Bulk
• FET Type：N-Channel
• Technology：GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id：1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 6 V
• Vgs (Max)：±18V
• Input Capacitance (Ciss) (Max) @ Vds：760 pF @ 400 V
• FET Feature：-
• Power Dissipation (Max)：52W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：4-DFN (8x8)
• Package / Case：4-PowerTSFN

Download product information