XPJR6604PB,LXHQ

Product Detailed Parameters

• Description：40V; UMOS9; 0.66MOHM; S-TOGL
• Series：U-MOSIX-H
• Mfr：Toshiba Semiconductor and Storage
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：40 V
• Current - Continuous Drain (Id) @ 25°C：200A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
• Rds On (Max) @ Id, Vgs：0.66mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id：3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：128 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：11380 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：375W (Tc)
• Operating Temperature：175°C
• Grade：Automotive
• Qualification：AEC-Q101
• Mounting Type：Surface Mount
• Supplier Device Package：S-TOGL™
• Package / Case：5-PowerSFN

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