TW083N65C,S1F

Product Detailed Parameters

• Description：G3 650V SIC-MOSFET TO-247 83MOH
• Series：-
• Mfr：Toshiba Semiconductor and Storage
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：18V
• Rds On (Max) @ Id, Vgs：113mOhm @ 15A, 18V
• Vgs(th) (Max) @ Id：5V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs：28 nC @ 18 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：873 pF @ 400 V
• FET Feature：-
• Power Dissipation (Max)：111W (Tc)
• Operating Temperature：175°C
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247
• Package / Case：TO-247-3

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