TW015Z120C,S1F

Product Detailed Parameters

• Description：G3 1200V SIC-MOSFET TO-247-4L 1
• Series：-
• Mfr：Toshiba Semiconductor and Storage
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：18V
• Rds On (Max) @ Id, Vgs：21mOhm @ 50A, 18V
• Vgs(th) (Max) @ Id：5V @ 11.7mA
• Gate Charge (Qg) (Max) @ Vgs：158 nC @ 18 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：6000 pF @ 800 V
• FET Feature：-
• Power Dissipation (Max)：431W (Tc)
• Operating Temperature：175°C
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-4L(X)
• Package / Case：TO-247-4

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