2SK1958-T1-A

Product Detailed Parameters

• Description：2SK1958-T1-A - N-CHANNEL MOS FET
• Series：-
• Mfr：Renesas
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：16 V
• Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
• Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
• Vgs(th) (Max) @ Id：1.1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：±7V
• Input Capacitance (Ciss) (Max) @ Vds：10 pF @ 3 V
• FET Feature：-
• Power Dissipation (Max)：150mW (Ta)
• Operating Temperature：150°C
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-MMPAK
• Package / Case：8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

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