UPA1902TE-T1-AT

Product Detailed Parameters

• Description：UPA1902TE-T1-AT - N-CHANNEL MOS
• Series：-
• Mfr：Renesas
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：30 V
• Current - Continuous Drain (Id) @ 25°C：7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：22mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：8 nC @ 5 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：780 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：200mW (Ta)
• Operating Temperature：150°C
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SC-95
• Package / Case：SC-95

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