WNSCM80120RQ

Product Detailed Parameters

• Description：WNSCM80120R/TO247-4L/STANDARD MA
• Series：-
• Mfr：WeEn Semiconductors
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：20V
• Rds On (Max) @ Id, Vgs：98mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id：4.5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs：59 nC @ 20 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 1000 V
• FET Feature：-
• Power Dissipation (Max)：270W (Ta)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-4L
• Package / Case：TO-247-4

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