EPC2012C

Product Detailed Parameters

• Description：GANFET N-CH 200V 5A DIE OUTLINE
• Series：eGaN®
• Mfr：EPC
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss)：200 V
• Current - Continuous Drain (Id) @ 25°C：5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：5V
• Rds On (Max) @ Id, Vgs：100mOhm @ 3A, 5V
• Vgs(th) (Max) @ Id：2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 5 V
• Vgs (Max)：+6V, -4V
• Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 100 V
• FET Feature：-
• Power Dissipation (Max)：-
• Operating Temperature：-40°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：Die
• Package / Case：Die

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