C2M0080120D

Product Detailed Parameters

• Description：SICFET N-CH 1200V 36A TO247-3
• Series：C2M™
• Mfr：Wolfspeed, Inc.
• Package：Bulk
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：1200 V
• Current - Continuous Drain (Id) @ 25°C：36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：20V
• Rds On (Max) @ Id, Vgs：98mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id：4V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs：62 nC @ 5 V
• Vgs (Max)：+25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 1000 V
• FET Feature：-
• Power Dissipation (Max)：192W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-3
• Package / Case：TO-247-3

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