C3M0015065D

Product Detailed Parameters

• Description：SICFET N-CH 650V 120A TO247-3
• Series：C3M™
• Mfr：Wolfspeed, Inc.
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：15V
• Rds On (Max) @ Id, Vgs：21mOhm @ 55.8A, 15V
• Vgs(th) (Max) @ Id：3.6V @ 15.5mA
• Gate Charge (Qg) (Max) @ Vgs：188 nC @ 15 V
• Vgs (Max)：+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds：5011 pF @ 400 V
• FET Feature：-
• Power Dissipation (Max)：416W (Tc)
• Operating Temperature：-40°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-3
• Package / Case：TO-247-3

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