C3M0025065K

Product Detailed Parameters

• Description：GEN 3 650V 25 M SIC MOSFET
• Series：C3M™
• Mfr：Wolfspeed, Inc.
• Package：Tube
• FET Type：N-Channel
• Technology：SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：15V
• Rds On (Max) @ Id, Vgs：34mOhm @ 33.5A, 15V
• Vgs(th) (Max) @ Id：3.6V @ 9.22mA
• Gate Charge (Qg) (Max) @ Vgs：112 nC @ 15 V
• Vgs (Max)：+19V, -8V
• Input Capacitance (Ciss) (Max) @ Vds：2980 pF @ 600 V
• FET Feature：-
• Power Dissipation (Max)：326W (Tc)
• Operating Temperature：-40°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-247-4L
• Package / Case：TO-247-4

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