EPC7014UBC

Product Detailed Parameters

• Description：GAN FET HEMT 60V 1A COTS 4UB
• Series：e-GaN®
• Mfr：EPC Space, LLC
• Package：Bulk
• FET Type：N-Channel
• Technology：GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：5V
• Rds On (Max) @ Id, Vgs：580mOhm @ 1A, 5V
• Vgs(th) (Max) @ Id：2.5V @ 140µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：+7V, -4V
• Input Capacitance (Ciss) (Max) @ Vds：22 pF @ 30 V
• FET Feature：-
• Power Dissipation (Max)：-
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：4-SMD
• Package / Case：4-SMD, No Lead

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