2002A

Product Detailed Parameters

• Description：N190V,5A,RD<540M@10V,VTH1.0V~3.0
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：190 V
• Current - Continuous Drain (Id) @ 25°C：5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：540mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id：3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：733 pF @ 100 V
• FET Feature：-
• Power Dissipation (Max)：1.4W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：SOT-23-6L
• Package / Case：SOT-23-6

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