9926

Product Detailed Parameters

• Description：N20V,RD(MAX)<25M@4.5V,RD(MAX)<30
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：20 V
• Current - Continuous Drain (Id) @ 25°C：6A
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：25mOhm @ 4.5A, 4.5V
• Vgs(th) (Max) @ Id：1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
• Vgs (Max)：±10V
• Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：1.25W
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-SOP
• Package / Case：8-SOIC (0.154", 3.90mm Width)

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