GT52N10T

Product Detailed Parameters

• Description：N100V,RD(MAX)<9M@10V,RD(MAX)<15M
• Series：SGT
• Mfr：Goford Semiconductor
• Package：Tube
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：9mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id：3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：2273 pF @ 50 V
• FET Feature：-
• Power Dissipation (Max)：100W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220F
• Package / Case：TO-220-3 Full Pack

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