GT2K0P20T

Product Detailed Parameters

• Description：MOSFET P-CH 200V 19A 138W 200M(M
• Series：SGT
• Mfr：Goford Semiconductor
• Package：Tube
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：200 V
• Current - Continuous Drain (Id) @ 25°C：19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：200mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id：3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
• Vgs (Max)：20V
• Input Capacitance (Ciss) (Max) @ Vds：3400 pF @ 100 V
• FET Feature：-
• Power Dissipation (Max)：138W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：-
• Package / Case：-

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