GT105N10M

Product Detailed Parameters

• Description：MOSFET N-CH 100V 60A 83W TO-263
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id：3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：1675 pF @ 50 V
• FET Feature：-
• Power Dissipation (Max)：83W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：TO-263
• Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information