GT100P06D5

Product Detailed Parameters

• Description：MOSFET P-CH 60V 60A 104W DFN5*6-
• Series：SGT
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT),-
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：9mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：3700 pF @ 30 V
• FET Feature：-
• Power Dissipation (Max)：104W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-DFN (5x6)
• Package / Case：8-PowerSMD, Flat Leads

Download product information