GT100N12D5

Product Detailed Parameters

• Description：N120V,RD(MAX)<10M@10V,VTH2.5V~3.
• Series：-
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：120 V
• Current - Continuous Drain (Id) @ 25°C：70A
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：10mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id：3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：3050 pF @ 60 V
• FET Feature：-
• Power Dissipation (Max)：120W
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-DFN (5x6)
• Package / Case：8-PowerVDFN

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