GT095N10S

Product Detailed Parameters

• Description：N100V, 21A,RD<9.5M@10V,VTH1.2V~2
• Series：SGT
• Mfr：Goford Semiconductor
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
• Rds On (Max) @ Id, Vgs：10.5mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id：2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：1628 pF @ 50 V
• FET Feature：-
• Power Dissipation (Max)：3.1W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：8-SOP
• Package / Case：8-SOIC (0.154", 3.90mm Width)

Download product information