RFB18N10CS

Product Detailed Parameters

• Description：MOSFET N-CH 100V 18A TO220AB-5
• Series：-
• Mfr：Harris Corporation
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：100 V
• Current - Continuous Drain (Id) @ 25°C：18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：-
• Rds On (Max) @ Id, Vgs：100mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：-
• FET Feature：Current Sensing
• Power Dissipation (Max)：79W (Tc)
• Operating Temperature：-55°C ~ 175°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220AB-5
• Package / Case：TO-220-5

Download product information