RFD16N05LSM

Product Detailed Parameters

• Description：N-CHANNEL POWER MOSFET
• Series：-
• Mfr：Harris Corporation
• Package：Tube
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：50 V
• Current - Continuous Drain (Id) @ 25°C：16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
• Rds On (Max) @ Id, Vgs：47mOhm @ 16A, 5V
• Vgs(th) (Max) @ Id：2V @ 250mA
• Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
• Vgs (Max)：±10V
• Input Capacitance (Ciss) (Max) @ Vds：-
• FET Feature：-
• Power Dissipation (Max)：60W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：TO-252AA
• Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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