RFP4N06

Product Detailed Parameters

• Description：N-CHANNEL POWER MOSFET
• Series：-
• Mfr：Harris Corporation
• Package：Bulk
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：800mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 25 V
• FET Feature：-
• Power Dissipation (Max)：25W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220
• Package / Case：TO-220-3

Download product information