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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 650V COPAKTube--*-
Infineon TechnologiesIGBT CHIPBulk----
Infineon TechnologiesIGBT CHIPBulk----
Infineon TechnologiesIGBT CHIPBulk----
Infineon TechnologiesIGBT CHIPBulk----
Microsemi CorporationTRANSISTORBulk--*-
92-0065
92-0065
$2.64
Infineon TechnologiesIGBT 600V 60A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
92-0235
92-0235
$1.70
Infineon TechnologiesIGBT 430V 20A TO-220ABTubeTO-220ABThrough Hole--40°C ~ 175°C (TJ)
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