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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
---|---|---|---|---|---|---|---|
![]() 1MS08017E32W31490NOSA1 $12,841.29000 | Infineon Technologies | MODULE IGBT STACK A-MS2-1 | Tray | - | - | - | - |
Infineon Technologies | IGBT MODULE 1700V 30A | Tray | Module | Through Hole | EiceDRIVER™ | -25°C ~ 85°C | |
Infineon Technologies | IGBT MODULE 1700V 30A | Tray | Module | Through Hole | EiceDRIVER™ | -40°C ~ 85°C | |
![]() 2LS20017E42W36702NOSA1 $4,280.43000 | Infineon Technologies | IGBT MODULE 1700V 20A | Bulk | - | Chassis Mount | ModSTACK™ | 150°C (TJ) |
Infineon Technologies | IGBT MODULE 1100VDC 325A | Bulk | Module | Chassis Mount | PrimeSTACK™ | -25°C ~ 55°C | |
![]() 2PS12017E34W32132NOSA1 $3,999.85000 | Infineon Technologies | MODULE IGBT STACK A-PS4-1 | Tray | Module | Chassis Mount | - | -25°C ~ 55°C |
Infineon Technologies | IGBT MODULE 690V 574A 2160W | Bulk | Module | Chassis Mount | PrimeSTACK™ | -25°C ~ 55°C | |
![]() 2PS13512E43W35222NOSA1 $4,235.28000 | Infineon Technologies | MODULE IGBT STACK A-PS3-1 | Tray | Module | Chassis Mount | PrimeSTACK™ | -25°C ~ 55°C |