IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesMODULE IGBT STACK A-MS2-1Tray----
Infineon TechnologiesIGBT MODULE 1700V 30ATrayModuleThrough HoleEiceDRIVER™-25°C ~ 85°C
Infineon TechnologiesIGBT MODULE 1700V 30ATrayModuleThrough HoleEiceDRIVER™-40°C ~ 85°C
Infineon TechnologiesIGBT MODULE 1700V 20ABulk-Chassis MountModSTACK™150°C (TJ)
Infineon TechnologiesIGBT MODULE 1100VDC 325ABulkModuleChassis MountPrimeSTACK™-25°C ~ 55°C
Infineon TechnologiesMODULE IGBT STACK A-PS4-1TrayModuleChassis Mount--25°C ~ 55°C
Infineon TechnologiesIGBT MODULE 690V 574A 2160WBulkModuleChassis MountPrimeSTACK™-25°C ~ 55°C
Infineon TechnologiesMODULE IGBT STACK A-PS3-1TrayModuleChassis MountPrimeSTACK™-25°C ~ 55°C
Add ComparisonUp to 4 can be added