Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 650V COPAKTube--*-
Infineon TechnologiesIGBT CHIPBulk----
Infineon TechnologiesIGBT CHIPBulk----
Infineon TechnologiesIGBT CHIPBulk----
Infineon TechnologiesIGBT CHIPBulk----
Microsemi CorporationTRANSISTORBulk--*-
92-0065
92-0065
$2.64000
Infineon TechnologiesIGBT 600V 60A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
92-0235
92-0235
$1.70000
Infineon TechnologiesIGBT 430V 20A TO-220ABTubeTO-220ABThrough Hole--40°C ~ 175°C (TJ)
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