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Goford Semiconductor 03N06 is sourced in Single FETs, MOSFETs category when teams want clear constraints and a repeatable validation path. Key specs include Description (N60V, RD MAX <100M@10V, RD MAX <12), Series (TrenchFET®), Packaging (Tape & Reel (TR), Cut Tape (CT)), Temperature (-55°C ~ 150°C (TJ)), and Package/case (TO-236-3, SC-59, SOT-23-3).
Can you confirm the Technology for 03N06?
MOSFET (Metal Oxide)
What is the Drain to Source Voltage (Vdss) of 03N06?
60 V
Which packaging format is listed for 03N06?
Tape & Reel (TR), Cut Tape (CT)
What Input Capacitance (Ciss) (Max) @ Vds does 03N06 have?
458 pF @ 30 V
Within practice, the question for Goford Semiconductor 03N06 in Single FETs, MOSFETs is whether it stays inside the electrical/thermal envelope while remaining easy to validate and support. Engineers often treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. A robust switch choice reduces field risk by keeping thermal margins and fault behavior stable across production variance. Design teams typically favor switches with clear SOA and repeatable behavior because it simplifies protection design and validation. In industrial power stages, device choices are validated for SOA margins and thermal rise under realistic waveforms. In automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. Within DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI.