1011GN-2200VP

1011GN-2200VP

  • Description:RF MOSFET HEMT 50V
  • Series:VP

SKU:7b259fc2d833 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V
  • Series:VP
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:HEMT
  • Frequency:1.03GHz ~ 1.09GHz
  • Gain:19.4dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:2200W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Module
  • Supplier Device Package:-
  • Configuration:-

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1011GN-2200VP

Buying Guide
Summary

Microchip Technology 1011GN-2200VP is an electronic component in RF FETs, MOSFETs category. Key specs: description: RF MOSFET HEMT 50V; series: VP; packaging: Bulk; package/case: Module; frequency: 1.03GHz ~ 1.09GHz.

Selection Notes
  • For 1011GN-2200VP, confirm package/case Module to ensure footprint compatibility.
  • For 1011GN-2200VP, confirm the operating frequency (1.03GHz ~ 1.09GHz) and any related tolerance requirements.
  • For 1011GN-2200VP, for replacements, match pinout/footprint first, then verify min/max ratings and timing margins (rated voltage 150 V; series VP).
FAQ

What information do you need to quote 1011GN-2200VP?
Send the part number (1011GN-2200VP), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for 1011GN-2200VP?
Microchip Technology

What is the package/case of 1011GN-2200VP?
Module

What is the operating frequency of 1011GN-2200VP?
1.03GHz ~ 1.09GHz

Application Scenarios
For Microchip Technology 1011GN-2200VP in the RF FETs, MOSFETs category, engineers prioritize integration risk control, documentation, and repeatable performance in production. They shape RF performance by controlling gain, matching, filtering, routing, and isolation in high-frequency signal paths. Engineers focus on layout discipline, controlled impedance, grounding, and shielding to prevent spurs, desense, and compliance failures. In private LTE/5G and Wi-Fi infrastructure, RF stages operate in outdoor units exposed to humidity and thermal stress where stability affects throughput. In IoT gateways, matching and filtering improve sensitivity and coexistence in crowded 2.4 GHz and sub-GHz environments. Overall, it strengthens system robustness by aligning electrical, thermal, and mechanical constraints with real deployment conditions.
1011GN-2200VP1011GN-2200VP

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