18N20F

Product Detailed Parameters

• Description：N200V, 18A,RD<0.19@10V,VTH1.0V~3
• Series：TrenchFET®
• Mfr：Goford Semiconductor
• Package：Tube
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：200 V
• Current - Continuous Drain (Id) @ 25°C：18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：190mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id：3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：852 pF @ 25 V
• FET Feature：-
• Power Dissipation (Max)：35W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：TO-220F
• Package / Case：TO-220-3 Full Pack

Download product information