1SV228TPH3F

1SV228TPH3F

$0.59
  • Description:DIODE VARACTOR DUAL 15V SC-59
  • Series:-

SKU:2cd390f36c2a Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE VARACTOR DUAL 15V SC-59
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:13.7pF @ 8V, 1MHz
  • Capacitance Ratio:2.6
  • Capacitance Ratio Condition:C3/C8
  • Voltage - Peak Reverse (Max):15 V
  • Diode Type:1 Pair Common Cathode
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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1SV228TPH3F

Buying Guide
Summary

Toshiba Semiconductor and Storage 1SV228TPH3F is an electronic component in Variable Capacitance (Varicaps, Varactors) category. Key specs: description: DIODE VARACTOR DUAL 15V SC-59; packaging: Tape & Reel (TR),Cut Tape (CT); temperature: 125°C (TJ); package/case: TO-236-3, SC-59, SOT-23-3; mounting: Surface Mount; frequency: 13.7pF @ 8V, 1MHz.

Selection Notes
  • For 1SV228TPH3F, confirm package/case TO-236-3, SC-59, SOT-23-3, mounting Surface Mount to ensure footprint compatibility.
  • For 1SV228TPH3F, validate the operating temperature range (125°C (TJ)) against your environment.
  • For 1SV228TPH3F, confirm the operating frequency (13.7pF @ 8V, 1MHz) and any related tolerance requirements.
FAQ

How can I request a quote for 1SV228TPH3F?
Send the part number (1SV228TPH3F), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for 1SV228TPH3F?
Toshiba Semiconductor and Storage

What is the mounting type of 1SV228TPH3F?
Surface Mount

What is the operating frequency of 1SV228TPH3F?
13.7pF @ 8V, 1MHz

Application Scenarios
For Toshiba Semiconductor and Storage 1SV228TPH3F in the Variable Capacitance (Varicaps, Varactors) category, engineers prioritize integration risk control, documentation, and repeatable performance in production. They shape RF performance by controlling gain, matching, filtering, routing, and isolation in high-frequency signal paths. Engineers focus on layout discipline, controlled impedance, grounding, and shielding to prevent spurs, desense, and compliance failures. Amplifier selection usually centers on noise figure, linearity (IP3), gain flatness, and stability across load mismatch. In handheld devices, compact RF building blocks reduce layout risk and speed compliance testing for emissions and susceptibility. In asset tracking, RFID elements must work near metal and liquids, so antenna and front-end choices determine real read range. In private LTE/5G and Wi-Fi infrastructure, RF stages operate in outdoor units exposed to humidity and thermal stress where stability affects throughput. Overall, it supports long-term maintainability by using clear selection criteria and repeatable validation practices.
1SV228TPH3F1SV228TPH3F
$0.59
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