1SV279,H3F

1SV279,H3F

$0.30
  • Description:PB-F ESC VARICAP DIODE (HF), IR=
  • Series:-

SKU:eadc1923c588 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:PB-F ESC VARICAP DIODE (HF), IR=
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:6.5pF @ 10V, 1MHz
  • Capacitance Ratio:2.5
  • Capacitance Ratio Condition:C2/C10
  • Voltage - Peak Reverse (Max):15 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:ESC

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1SV279,H3F

Buying Guide
Summary

Toshiba Semiconductor and Storage 1SV279H3F is an electronic component in Variable Capacitance (Varicaps, Varactors) category. Key specs: description: PB-F ESC VARICAP DIODE (HF), IR=; packaging: Tape & Reel (TR),Cut Tape (CT); temperature: 125°C (TJ); package/case: SC-79, SOD-523; mounting: Surface Mount; frequency: 6.5pF @ 10V, 1MHz.

Selection Notes
  • For 1SV279H3F, confirm package/case SC-79, SOD-523, mounting Surface Mount to ensure footprint compatibility.
  • For 1SV279H3F, validate the operating temperature range (125°C (TJ)) against your environment.
  • For 1SV279H3F, confirm the operating frequency (6.5pF @ 10V, 1MHz) and any related tolerance requirements.
FAQ

What information do you need to quote 1SV279H3F?
Send the part number (1SV279H3F), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for 1SV279H3F?
Toshiba Semiconductor and Storage

What is the operating temperature range of 1SV279H3F?
125°C (TJ)

What is the package/case of 1SV279H3F?
SC-79, SOD-523

Application Scenarios
Toshiba Semiconductor and Storage 1SV279H3F in the Variable Capacitance (Varicaps, Varactors) category is typically selected when engineers need predictable, spec-driven behavior in a production design. Good RF building blocks accelerate certification and reduce re-spin risk in antenna-to-baseband designs. They shape RF performance by controlling gain, matching, filtering, routing, and isolation in high-frequency signal paths. In industrial sensing, RF front ends support radar and presence detection where phase noise and filtering influence range accuracy. In handheld devices, compact RF building blocks reduce layout risk and speed compliance testing for emissions and susceptibility. Biasing, thermal design, and output matching are treated as system-level problems, not just a schematic choice. Overall, it improves predictability by keeping key performance stable across manufacturing variance and operating conditions.
1SV279,H3F1SV279,H3F
$0.30
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