1SV310TPH3F

1SV310TPH3F

$0.32
  • Description:DIODE VARACTOR 10V USC
  • Series:-

SKU:f7c17aa5023a Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE VARACTOR 10V USC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:5.45pF @ 4V, 1MHz
  • Capacitance Ratio:2.1
  • Capacitance Ratio Condition:C1/C4
  • Voltage - Peak Reverse (Max):10 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:USC

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1SV310TPH3F

Buying Guide
Summary

Toshiba Semiconductor and Storage 1SV310TPH3F is an electronic component in Variable Capacitance (Varicaps, Varactors) category. Key specs: description: DIODE VARACTOR 10V USC; packaging: Tape & Reel (TR),Cut Tape (CT); temperature: 125°C (TJ); package/case: SC-76, SOD-323; mounting: Surface Mount; frequency: 5.45pF @ 4V, 1MHz.

Selection Notes
  • For 1SV310TPH3F, confirm package/case SC-76, SOD-323, mounting Surface Mount to ensure footprint compatibility.
  • For 1SV310TPH3F, validate the operating temperature range (125°C (TJ)) against your environment.
  • For 1SV310TPH3F, confirm the operating frequency (5.45pF @ 4V, 1MHz) and any related tolerance requirements.
FAQ

What information do you need to quote 1SV310TPH3F?
Send the part number (1SV310TPH3F), quantity, target delivery date, and any required packaging or documentation.

Who is the manufacturer/brand for 1SV310TPH3F?
Toshiba Semiconductor and Storage

What is the operating frequency of 1SV310TPH3F?
5.45pF @ 4V, 1MHz

What is the packaging of 1SV310TPH3F?
Tape & Reel (TR),Cut Tape (CT)

Application Scenarios
In the Variable Capacitance (Varicaps, Varactors) category, Toshiba Semiconductor and Storage 1SV310TPH3F is often evaluated by how well it fits electrical, thermal, and mechanical constraints in the target system. Their specifications directly influence link budget, sensitivity, selectivity, and emission margins in crowded spectrum environments. Good RF building blocks accelerate certification and reduce re-spin risk in antenna-to-baseband designs. In private LTE/5G and Wi-Fi infrastructure, RF stages operate in outdoor units exposed to humidity and thermal stress where stability affects throughput. In IoT gateways, matching and filtering improve sensitivity and coexistence in crowded 2.4 GHz and sub-GHz environments. Amplifier selection usually centers on noise figure, linearity (IP3), gain flatness, and stability across load mismatch. Overall, it strengthens system robustness by aligning electrical, thermal, and mechanical constraints with real deployment conditions.
1SV310TPH3F1SV310TPH3F
$0.32
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