2N3819 APM TIN/LEAD

Product Detailed Parameters

• Description：8V 10MA 360MW TH JFET N CHANNEL
• Series：-
• Mfr：Central Semiconductor Corp
• Package：Tape & Box (TB)
• FET Type：N-Channel
• Voltage - Breakdown (V(BR)GSS)：25 V
• Drain to Source Voltage (Vdss)：25 V
• Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
• Current Drain (Id) - Max：-
• Voltage - Cutoff (VGS off) @ Id：8 V @ 2 nA
• Input Capacitance (Ciss) (Max) @ Vds：8pF @ 15V
• Resistance - RDS(On)：-
• Power - Max：360 mW
• Operating Temperature：-65°C ~ 150°C (TJ)
• Mounting Type：Through Hole
• Package / Case：TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package：TO-92-3
• Grade：-
• Qualification：-

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