2N5401

Product Detailed Parameters

• Description：150V 625MW 60@10MA,5V 600MA PNP
• Series：-
• Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
• Package：Bag
• Transistor Type：PNP
• Current - Collector (Ic) (Max)：600 mA
• Voltage - Collector Emitter Breakdown (Max)：150 V
• Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max)：50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
• Power - Max：625 mW
• Frequency - Transition：300MHz
• Operating Temperature：150°C (TJ)
• Mounting Type：Through Hole
• Package / Case：TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package：TO-92
• Grade：-
• Qualification：-

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