2N7002BKS,115

2N7002BKS,115

$0.24
  • Description:MOSFET 2N-CH 60V 0.3A 6TSSOP
  • Series:TrenchMOS™

SKU:c9b8c9efb959 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.3A 6TSSOP
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
  • Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
  • Power - Max:295mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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2N7002BKS,115

Buying Guide
Summary

Nexperia USA Inc. 2N7002BKS115 is used in FET, MOSFET Arrays category where integration and verification need to stay predictable. Key specs include Description (MOSFET 2N-CH 60V 0.3A 6TSSOP), Series (TrenchMOS™), Packaging (Tape & Reel (TR), Cut Tape (CT)), Temperature (150°C (TJ)), and Package/case (6-TSSOP, SC-88, SOT-363).

Selection Notes
  • For 2N7002BKS115, validate the operating temperature range (150°C (TJ)) for your environment and margin.
  • Verify Drain to Source Voltage (Vdss) (60V) matches your requirements and the datasheet test conditions.
  • Ensure the package/case (6-TSSOP, SC-88, SOT-363) and land pattern match your PCB layout before procurement.
  • Check the supply current (300mA (Ta)) in your power budget and thermal plan.
Alternates & Substitutions
  • For FET, MOSFET Arrays, treat alternates as an integration task and validate the assumptions that matter on the assembled system.
  • Compare not just numbers but also the conditions: rails, loads, timing, and temperature points behind the spec table.
  • Make sure the alternate stays inside your system envelope: temperature 150°C (TJ).
  • Confirm compliance/qualification needs (for example RoHS/REACH or grade) before approving a second source for production.
FAQ

Who is the manufacturer of 2N7002BKS115?
Nexperia USA Inc.

What Drain to Source Voltage (Vdss) does 2N7002BKS115 have?
60V

Which packaging format is listed for 2N7002BKS115?
Tape & Reel (TR), Cut Tape (CT)

Can you confirm the Rds On (Max) @ Id, Vgs for 2N7002BKS115?
1.6Ohm @ 500mA, 10V

Application Scenarios

For Nexperia USA Inc. 2N7002BKS115 used in FET, MOSFET Arrays designs, the shortlist is often driven by predictable margins and a straightforward validation plan. Engineers typically treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. They are generally used when a design must handle inductive loads, fast edges, or high current in compact footprints. A good discrete switch choice improves efficiency and robustness while keeping thermal design and qualification predictable. Across power adapters, switching behavior influences efficiency, heat, and audible noise across operating modes. In motor control and robotics, MOSFET stages must survive stalls and reversals, so SOA and transient strategy are validated under real waveforms. In power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability. In the end, reducing integration uncertainty is what keeps schedules predictable and field reliability high.

Compatibility Advice
  • To avoid late surprises, validate dv/dt stress and Miller effects so switching does not trigger unintended turn-on under real parasitics. This helps field behavior stay predictable across lots.
Project Fit
  • Most suitable when you can qualify Nexperia USA Inc. 2N7002BKS115 for FET, MOSFET Arrays integration across temperature and supply corners, and you can measure dv/dt, overshoot, and junction temperature so margin is not inferred.
2N7002BKS,1152N7002BKS,115
$0.24
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