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Nexperia USA Inc. 2N7002BKS115 is used in FET, MOSFET Arrays category where integration and verification need to stay predictable. Key specs include Description (MOSFET 2N-CH 60V 0.3A 6TSSOP), Series (TrenchMOS™), Packaging (Tape & Reel (TR), Cut Tape (CT)), Temperature (150°C (TJ)), and Package/case (6-TSSOP, SC-88, SOT-363).
Who is the manufacturer of 2N7002BKS115?
Nexperia USA Inc.
What Drain to Source Voltage (Vdss) does 2N7002BKS115 have?
60V
Which packaging format is listed for 2N7002BKS115?
Tape & Reel (TR), Cut Tape (CT)
Can you confirm the Rds On (Max) @ Id, Vgs for 2N7002BKS115?
1.6Ohm @ 500mA, 10V
For Nexperia USA Inc. 2N7002BKS115 used in FET, MOSFET Arrays designs, the shortlist is often driven by predictable margins and a straightforward validation plan. Engineers typically treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. They are generally used when a design must handle inductive loads, fast edges, or high current in compact footprints. A good discrete switch choice improves efficiency and robustness while keeping thermal design and qualification predictable. Across power adapters, switching behavior influences efficiency, heat, and audible noise across operating modes. In motor control and robotics, MOSFET stages must survive stalls and reversals, so SOA and transient strategy are validated under real waveforms. In power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability. In the end, reducing integration uncertainty is what keeps schedules predictable and field reliability high.