2SJ358-T1-AZ

2SJ358-T1-AZ

$0.87
  • Description:2SJ358-T1-AZ - P-CHANNEL MOS FET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:68e677aee6cb Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:2SJ358-T1-AZ - P-CHANNEL MOS FET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:300mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:23.9 nC @ 10 V
  • Vgs (Max):+10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:MP-2
  • Package / Case:TO-243AA

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2SJ358-T1-AZ

Buying Guide
Summary

Renesas 2SJ358-T1-AZ is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (2SJ358-T1-AZ - P-CHANNEL MOS FET), Packaging (Bulk), Temperature (150°C), Package/case (TO-243AA), and Mounting (Surface Mount).

Selection Notes
  • For 2SJ358-T1-AZ, check the supply current (3A (Ta)) in your power budget and thermal plan.
  • Validate the operating temperature range (150°C) for your environment and margin.
  • Make sure FET Type (P-Channel) aligns with your design targets and verification plan.
  • Ensure the package/case (TO-243AA) and land pattern match your PCB layout before procurement.
Alternates & Substitutions
  • For Single FETs, MOSFETs, treat alternates as an integration task and validate the assumptions that matter on the assembled system.
  • Before looking at performance tables, lock package/case TO-243AA, supplier package MP-2, mounting Surface Mount and verify the system envelope (temperature 150°C) to avoid a non-drop-in swap.
  • Confirm compliance/qualification needs (for example RoHS/REACH or grade) before approving a second source for production.
  • Always compare the datasheet test conditions behind key specs (load, frequency, temperature) to avoid swapping in a part that was characterized differently.
FAQ

Is 2SJ358-T1-AZ surface-mount or through-hole?
Surface Mount

Which supply current is specified for 2SJ358-T1-AZ?
3A (Ta)

What is the operating temperature range of 2SJ358-T1-AZ?
150°C

Which Rds On (Max) @ Id, Vgs is specified for 2SJ358-T1-AZ?
300mOhm @ 1.5A, 10V

Application Scenarios

Renesas 2SJ358-T1-AZ shows up under Single FETs, MOSFETs when designers want a well-bounded, datasheet-driven building block instead of a fragile board-level workaround. Selection focuses on operating envelope (breakdown voltage/current), conduction loss, switching behavior, package parasitics, and thermal impedance under realistic waveforms. They are often used when a design must handle inductive loads, fast edges, or high current in compact footprints. In real deployments, across automotive electronics, discrete devices are qualified for transients, vibration, and predictable failure modes over thermal cycling. Across automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. In DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI. Engineers generally treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI.

Compatibility Advice
  • To reduce integration risk, validate gate/base drive assumptions and switching transitions so losses and EMI stay inside the system budget. This keeps integration from depending on typical-only conditions.
  • In practice, check gate/base charge and transition timing so switching loss and EMI are predictable across substitutions. This avoids one-off tuning in production.
  • With the real source, load, and wiring, verify the gate-drive loop, sense points, and protection thresholds are measurable on the assembled system. This avoids one-off tuning in production.
Project Fit
  • Riskier when integrating Renesas 2SJ358-T1-AZ for Single FETs, MOSFETs, switching transitions and thermal rise cannot be measured in a repeatable way, because the integration depends on constraints that cannot be controlled across builds.
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