2SJ529L06-E

Product Detailed Parameters

• Description：2SJ529L06 - P-CHANNEL POWER MOSF
• Series：-
• Mfr：Renesas
• Package：Bulk
• FET Type：P-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：60 V
• Current - Continuous Drain (Id) @ 25°C：10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
• Rds On (Max) @ Id, Vgs：160mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id：2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs：-
• Vgs (Max)：±20V
• Input Capacitance (Ciss) (Max) @ Vds：580 pF @ 10 V
• FET Feature：-
• Power Dissipation (Max)：20W (Tc)
• Operating Temperature：150°C
• Grade：-
• Qualification：-
• Mounting Type：Through Hole
• Supplier Device Package：DPAK(L)-(2)
• Package / Case：TO-251-3 Long Leads, IPak, TO-251AB

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