2SJ529L06-E

2SJ529L06-E

$1.06
  • Description:2SJ529L06 - P-CHANNEL POWER MOSF
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:c806d2b7542f Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:2SJ529L06 - P-CHANNEL POWER MOSF
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:160mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:DPAK(L)-(2)
  • Package / Case:TO-251-3 Long Leads, IPak, TO-251AB

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2SJ529L06-E

Buying Guide
Summary

Renesas 2SJ529L06-E is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (2SJ529L06 - P-CHANNEL POWER MOSF), Packaging (Bulk), Temperature (150°C), Package/case (TO-251-3 Long Leads, IPak, TO-251AB), and Mounting (Through Hole).

Selection Notes
  • For 2SJ529L06-E, verify Rds On (Max) @ Id, Vgs (160mOhm @ 5A, 10V) matches your requirements and the datasheet test conditions.
  • Double-check the mounting type (Through Hole) for your intended installation method.
  • Confirm the supply current (10A (Ta)) is acceptable for standby and active operation.
  • Verify the operating temperature range (150°C) and derate as needed in your application.
Alternates & Substitutions
  • For Single FETs, MOSFETs, treat alternates as an integration task and validate the assumptions that matter on the assembled system.
  • Before looking at performance tables, lock package/case TO-251-3 Long Leads, IPak, TO-251AB, supplier package DPAK(L)-(2), mounting Through Hole and verify the system envelope (temperature 150°C) to avoid a non-drop-in swap.
  • Confirm compliance/qualification needs (for example RoHS/REACH or grade) before approving a second source for production.
  • Compare not just numbers but also the conditions: rails, loads, timing, and temperature points behind the spec table.
FAQ

What should I compare when selecting an alternate for 2SJ529L06-E?
Compare footprint/pinout, key electrical limits, temperature range, and interface requirements, then validate under worst-case conditions.

What Rds On (Max) @ Id, Vgs does 2SJ529L06-E have?
160mOhm @ 5A, 10V

What Technology is listed for 2SJ529L06-E?
MOSFET (Metal Oxide)

Can you confirm the Input Capacitance (Ciss) (Max) @ Vds for 2SJ529L06-E?
580 pF @ 10 V

Application Scenarios

Selecting Renesas 2SJ529L06-E for Single FETs, MOSFETs usually comes down to meeting the system constraints that matter most: limits, interfaces, and testability in the real build. Engineers generally treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. Selection focuses on operating envelope (breakdown voltage/current), conduction loss, switching behavior, package parasitics, and thermal impedance under realistic waveforms. They are typically used when a design must handle inductive loads, fast edges, or high current in compact footprints. In robotics, actuator and motor switching stages are validated for stalls and rapid reversals without unsafe operating conditions. Within automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. Across DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI.

Compatibility Advice
  • To avoid late surprises, validate gate-drive loop inductance and Miller effects so switching does not trigger unintended turn-on with the final enclosure and cabling.
  • To reduce integration risk, confirm short-circuit and fault response behavior matches the system protection plan, because timing often dominates survivability before freezing the BOM.
Project Fit
  • Best fit when you can qualify Renesas 2SJ529L06-E for Single FETs, MOSFETs integration on the assembled PCB, and you can control layout parasitics so gate-drive and protection assumptions remain repeatable.
  • Less ideal when integrating Renesas 2SJ529L06-E for Single FETs, MOSFETs, snubber and clamp behavior is undefined, leaving overshoot and EMI risk open, because the integration depends on constraints that cannot be controlled across builds.
2SJ529L06-E2SJ529L06-E
$1.06
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