2SK1581-T1B-A

2SK1581-T1B-A

$0.18
  • Description:2SK1581-T1B-A - SWITCHING N-CHAN
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:d44883f956b0 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:2SK1581-T1B-A - SWITCHING N-CHAN
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):16 V
  • Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 1mA, 4V
  • Vgs(th) (Max) @ Id:1.6V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 3 V
  • FET Feature:-
  • Power Dissipation (Max):200mW (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-59
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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2SK1581-T1B-A

Buying Guide
Summary

Renesas 2SK1581-T1B-A is sourced in Single FETs, MOSFETs category when teams want clear constraints and a repeatable validation path. Key specs include Description (2SK1581-T1B-A - SWITCHING N-CHAN), Packaging (Bulk), Temperature (150°C), Package/case (TO-236-3, SC-59, SOT-23-3), and Mounting (Surface Mount).

Selection Notes
  • For 2SK1581-T1B-A, verify the operating temperature range (150°C) and derate as needed in your application.
  • Confirm Input Capacitance (Ciss) (Max) @ Vds (27 pF @ 3 V) and ensure it matches your integration requirements.
  • Double-check the mounting type (Surface Mount) for your intended installation method.
Alternates & Substitutions
  • For Single FETs, MOSFETs substitutions, lock footprint/pinout and operating envelope first, then verify the critical performance conditions on your hardware.
  • When evaluating alternates, treat package/case TO-236-3, SC-59, SOT-23-3, supplier package SC-59, mounting Surface Mount as non-negotiable unless you are re-spinning the PCB.
  • When in doubt, treat the swap as an ECO: define acceptance criteria, then validate under worst-case operating corners.
  • If you need a second source, provide (package TO-236-3, SC-59, SOT-23-3) and we will suggest options to evaluate under a clear test plan.
FAQ

How do I confirm compatibility for 2SK1581-T1B-A?
Match mechanical footprint first, then verify electrical limits and operating conditions against your system constraints.

What Vgs (Max) is listed for 2SK1581-T1B-A?
±16V

Can you confirm the Supplier Device Package for 2SK1581-T1B-A?
SC-59

Which Drain to Source Voltage (Vdss) is specified for 2SK1581-T1B-A?
16 V

Application Scenarios

For Renesas 2SK1581-T1B-A in the Single FETs, MOSFETs category, teams usually prioritize documentation clarity and repeatable behavior in production. Engineers typically treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. They switch or control current and voltage, enabling load control, power conversion, and signal conditioning at the component level. In real deployments, selection focuses on operating envelope (breakdown voltage/current), conduction loss, switching behavior, package parasitics, and thermal impedance under realistic waveforms. In automotive electronics, discrete devices are qualified for transients, vibration, and predictable failure modes over thermal cycling. In motor control and robotics, MOSFET stages must survive stalls and reversals, so SOA and transient strategy are validated under real waveforms. In real deployments, across power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability.

Compatibility Advice
  • For compatibility, confirm SOA and avalanche margins under the real waveform, because parasitics decide peak stress. This helps field behavior stay predictable across lots.
  • In qualification work, check thermal rise with the real heatsinking and interface materials so protection thresholds do not drift in the enclosure. This keeps acceptance criteria measurable and repeatable.
  • In practice, validate that the driver, clamp, and protection thresholds remain stable across temperature and supply variation and temperature and supply corners.
Project Fit
  • Best fit for Single FETs, MOSFETs when you can validate gate drive, SOA margins, snubber behavior, and thermal rise under the real waveform.
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