2SK1958-T1-A

2SK1958-T1-A

$0.07
  • Description:2SK1958-T1-A - N-CHANNEL MOS FET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:41520a6a3f1e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:2SK1958-T1-A - N-CHANNEL MOS FET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):16 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
  • Rds On (Max) @ Id, Vgs:12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id:1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±7V
  • Input Capacitance (Ciss) (Max) @ Vds:10 pF @ 3 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-MMPAK
  • Package / Case:8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

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2SK1958-T1-A

Buying Guide
Summary

Renesas 2SK1958-T1-A is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (2SK1958-T1-A - N-CHANNEL MOS FET), Packaging (Bulk), Temperature (150°C), Package/case (8-TSSOP, 8-MSOP (0.110", 2.80mm Width)), and Mounting (Surface Mount).

Selection Notes
  • For 2SK1958-T1-A, check FET Type (N-Channel) against the datasheet conditions and your system-level constraints.
  • Verify the package/case (8-TSSOP, 8-MSOP (0.110", 2.80mm Width)) fits your mechanical constraints and assembly process.
  • Make sure the supply current (100mA (Ta)) fits your power budget in all modes.
Alternates & Substitutions
  • For Single FETs, MOSFETs, validate alternates under worst-case corners rather than assuming typical-only conditions represent production builds.
  • Validate the min/max operating conditions (temperature 150°C) and keep headroom for worst-case corners.
  • Treat package/case 8-TSSOP, 8-MSOP (0.110", 2.80mm Width), supplier package 8-MMPAK, mounting Surface Mount as the first filter, then move on to electrical and performance checks.
  • If you are qualifying a second source, align documentation/traceability requirements early to avoid surprises in procurement.
FAQ

What should I compare when selecting an alternate for 2SK1958-T1-A?
Compare footprint/pinout, key electrical limits, temperature range, and interface requirements, then validate under worst-case conditions.

What Vgs (Max) is listed for 2SK1958-T1-A?
±7V

What package/case is listed for 2SK1958-T1-A?
8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

What Technology is listed for 2SK1958-T1-A?
MOSFET (Metal Oxide)

Application Scenarios

In many Single FETs, MOSFETs builds, Renesas 2SK1958-T1-A is reviewed for predictable behavior, supportability, and stable qualification evidence. MOSFET selection typically balances RDS(on), gate charge, switching loss, package parasitics, and thermal impedance under the intended PWM and load profile. A good discrete switch choice improves efficiency and robustness while keeping thermal design and qualification predictable. Good switch selection keeps losses and temperature rise predictable, which makes qualification and derating easier to defend. In outdoor equipment, derating and PCB heat spreading determine long-term reliability under harsh environments. Within power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability. In automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. The goal is keeping performance inside margins while making the design easy to verify, service, and support.

Compatibility Advice
  • For production stability, verify clamp/snubber behavior so overshoot is bounded in production wiring and harnesses across temperature and supply corners.
  • In practice, check thermal rise with the intended mounting and airflow so junction temperature remains predictable after heat soak on the assembled PCB.
Project Fit
  • Usually not a good fit when integrating Renesas 2SK1958-T1-A for Single FETs, MOSFETs, layout and parasitics cannot be controlled enough to keep transient stress predictable, because the remaining risk is system-level and cannot be bounded by datasheet checks alone.
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