2SK2109-T1-AZ

2SK2109-T1-AZ

$0.40
  • Description:2SK2109-T1-AZ - N-CHANNEL MOS FE
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:f2eb89b3c545 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:2SK2109-T1-AZ - N-CHANNEL MOS FE
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 300mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:111 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-62
  • Package / Case:TO-243AA

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2SK2109-T1-AZ

Buying Guide
Summary

Renesas 2SK2109-T1-AZ is used in Single FETs, MOSFETs category where integration and verification need to stay predictable. Key specs include Description (2SK2109-T1-AZ - N-CHANNEL MOS FE), Packaging (Bulk), Temperature (150°C), Package/case (TO-243AA), and Mounting (Surface Mount).

Selection Notes
  • For 2SK2109-T1-AZ, confirm the supply current (500mA (Ta)) is acceptable for standby and active operation.
  • Verify the operating temperature range (150°C) and derate as needed in your application.
  • Double-check Vgs (Max) (±20V) against your specification and operating conditions.
  • Double-check the mounting type (Surface Mount) for your intended installation method.
Alternates & Substitutions
  • For Single FETs, MOSFETs, treat alternates as an integration task and validate the assumptions that matter on the assembled system.
  • Before looking at performance tables, lock package/case TO-243AA, supplier package SC-62, mounting Surface Mount and verify the system envelope (temperature 150°C) to avoid a non-drop-in swap.
  • For production substitutions, confirm traceability and documentation expectations so the alternate can be released cleanly.
  • Always compare the datasheet test conditions behind key specs (load, frequency, temperature) to avoid swapping in a part that was characterized differently.
FAQ

What details help you quote 2SK2109-T1-AZ quickly?
Provide the part number (2SK2109-T1-AZ), quantity, required lead time, and any packaging or documentation requirements.

Who is the manufacturer of 2SK2109-T1-AZ?
Renesas

What is the Power Dissipation (Max) of 2SK2109-T1-AZ?
2W (Ta)

Which FET Type is listed for 2SK2109-T1-AZ?
N-Channel

Application Scenarios

In real deployments, for Renesas 2SK2109-T1-AZ used in Single FETs, MOSFETs designs, the shortlist is often driven by predictable margins and a straightforward validation plan. A robust switch choice reduces field risk by keeping thermal margins and fault behavior stable across production variance. Design teams often favor switches with clear SOA and repeatable behavior because it simplifies protection design and validation. MOSFET selection typically balances RDS(on), gate charge, switching loss, package parasitics, and thermal impedance under the intended PWM and load profile. After alignment on constraints and testability, teams can focus on application-specific validation and deployment risks. In automotive electronics, discrete devices are qualified for transients, vibration, and predictable failure modes over thermal cycling. In DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI. Within production builds, repeatability is what protects you from lot variation and environmental stress.

Compatibility Advice
  • In practice, confirm SOA and avalanche margins under the real waveform, because parasitics decide peak stress before committing to volume builds.
Project Fit
  • Works best when you can qualify Renesas 2SK2109-T1-AZ for Single FETs, MOSFETs integration across temperature and supply corners, if you can control layout parasitics so gate-drive and protection assumptions remain repeatable.
  • Not ideal when integrating Renesas 2SK2109-T1-AZ for Single FETs, MOSFETs, snubber or clamp behavior is undefined, so overvoltage and EMI risk remains open, because the behavior cannot be verified in a repeatable way.
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